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參數(shù)資料
| 型號： | BUK654R6-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 187K |
| 代理商： | BUK654R6-55C |
1.
Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 14 October 2010
Product data sheet
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
DS
drain-source
voltage
T
j
≥
25 °C; T
j
≤
175 °C
-
-
55
V
I
D
drain current
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
[1]
-
-
100
A
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
-
-
204
W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
-
4.6
5.4
m
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK654R6-55C,127 | 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK654R8-40C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V88ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.84mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK654R8-40C,127 | 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK655-450B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK655-500A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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