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參數資料
| 型號： | BUK6E2R0-30C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | PLASTIC, TO-262, I2PAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 181K |
| 代理商： | BUK6E2R0-30C |
1.
Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
[1]
Continuous current is limited by package.
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 7 September 2010
Product data sheet
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
30
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
-
-
120
A
P
tot
total power
dissipation
-
-
306
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 16
-
1.9
2.2
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 120 A; V
sup
≤
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
1.7
J
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相關代理商/技術參數 |
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| BUK6E2R0-30C,127 | 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6E2R3-40C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.3V, No. of Pins:3, MSL:- , RoHS Compliant: Yes |
| BUK6E2R3-40C,127 | 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6E3R2-55C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Cur |
| BUK6E3R2-55C,127 | 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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