- 您現在的位置：買賣IC網 > PDF目錄385200 > BUK7222-55A (NXP Semiconductors N.V.) N-channel TrenchMOS standard level FET PDF資料下載
參數資料
| 型號： | BUK7222-55A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標準電平場效應管 |
| 封裝： | BUK7222-55A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,; |
| 文件頁數： | 1/13頁 |
| 文件大小： | 186K |
| 代理商： | BUK7222-55A |
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
BUK7222-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 23 February 2011
Product data sheet
DA
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
55
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
-
-
48
A
P
tot
total power
dissipation
-
-
103
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 10
;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 10
;
see
Figure 11
-
-
44
m
-
19
22
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 48 A; V
sup
≤
55 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
160
mJ
相關PDF資料 |
PDF描述 |
|---|---|
| BUK7226-75A | N-channel TrenchMOS standard level FET |
| BUK7227-100B | N-channel TrenchMOS standard level FET |
| BUK7230-55A | N-channel TrenchMOS standard level FET |
| BUK7240-100A | N-channel TrenchMOS standard level FET |
| BUK724R5-30C | N-channel TrenchMOS standard level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK7222-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7222-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7225-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK7225-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7225-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。