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參數資料
| 型號： | BUK725R0-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 40 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 214K |
| 代理商： | BUK725R0-40C |
BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
[1]
Current is limited by package.
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
Quick reference
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
;
see
Figure 3
;
T
mb
= 25 °C; see
Figure 2
Min
-
-
Typ
-
-
Max
40
75
Unit
V
A
[1]
P
tot
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
total power dissipation
-
-
157
W
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
240
mJ
V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V; T
j
= 25 °C;
see
Figure 15
-
27
-
nC
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12
; see
Figure 13
-
4.1
5
m
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