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參數資料
| 型號： | BUK7514-55A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標準電平場效應管 |
| 封裝： | BUK7514-55A<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,; |
| 文件頁數： | 1/12頁 |
| 文件大小： | 164K |
| 代理商： | BUK7514-55A |
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Static characteristics
R
DSon
BUK7514-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
T-2A
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
Typ
-
-
-
Max
55
73
166
Unit
V
A
W
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
-
12
14
m
Avalanche Ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 50 A; V
sup
≤
25 V;
R
GS
= 50
; V
GS
= 5 V;
T
j(init)
= 25 °C;
unclamped
-
-
125
mJ
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