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參數資料
| 型號： | BUL128D-A |
| 英文描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 400V五（巴西）總裁| 4A條一（c）| TO - 220AB現有 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 216K |
| 代理商： | BUL128D-A |
BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
FE
range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
Parameter
Value
1200
1200
550
9
5
8
2
4
36
1500
Unit
V
V
V
V
A
A
A
A
W
V
Collector-BaseVoltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
T
stg
T
j
-65 to 150
150
o
C
o
C
1
2
3
TO-220FP
1/7
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| BUL128D-B_05 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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