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參數資料
| 型號： | BUL49B |
| 英文描述： | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 40A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管|叩| 250V五（巴西）總裁| 40A條一（c）|至3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | BUL49B |
BUL47A
Bipolar NPN Device.
V
CEO
= 300V
I
C
= 40A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
300
V
I
C(CONT)
40
A
h
FE
@ 4/25 (V
CE
/ I
C
)
25
-
f
t
20M
Hz
P
D
200
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL49D | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL49D_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL49D_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistors |
| BUL49DFP | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL50A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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