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參數(shù)資料
| 型號(hào)： | BUL54ASMD |
| 英文描述： | Advanced Distributed Base Design,High Voltage,High Speed NPN Silicon Power Transistor(高級(jí)分布式設(shè)計(jì)的高電壓,高速功率NPN硅晶體管) |
| 中文描述： | 先進(jìn)的分布式基站設(shè)計(jì)，高壓，高速NPN硅功率晶體管（高級(jí)分布式設(shè)計(jì)的高電壓，高速功率npn型硅晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | BUL54ASMD |
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukBUL54ASMD
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
Operating and Storage Temperature Range
Thermal Resistance Junction – Case
T
stg
R
th
1000V
500V
10V
2A
4A
0.8A
35W
0.2W/°C
–65 to 200°C
3.5°C/W
MECHANICAL DATA
Dimensions in mm
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING (t
f
= 40ns)
EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
MILITARY AND HI–REL OPTIONS
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
FEATURES
Multi–base design for efficient energy
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1 Package
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