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參數資料
| 型號： | BUL72B-LCC4 |
| 英文描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 8A I(C) | LLCC |
| 中文描述： | 晶體管|晶體管|叩| 100V的五（巴西）總裁| 8A條一（c）| LLCC |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | BUL72B-LCC4 |
BUL72B - LCC4
LA B
S E M E
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch
to batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
R
q
j-c
T
stg
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
200V
100V
10V
8A
12A
2A
5W
25°C/W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
1.39 (0.055)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
Rad.
Rad.
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
LCC4
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