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參數資料
| 型號： | BUL742 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 112K |
| 代理商： | BUL742 |
BUL742
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
LARGE RBSOA
APPLICATIONS
I
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
June 2001
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
900
V
V
CEO
V
EBO
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= 0.75 A, t
p
< 10
μ
s, T
j
< 150
o
C)
Collector Current
400
V
BV
EBO
V
I
C
I
CM
4
A
Collector Peak Current (t
p
<5 ms)
8
A
I
B
Base Current
2
A
I
BM
P
tot
T
stg
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
4
A
70
W
o
C
o
C
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
150
1
2
3
TO-220
1/5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL742A | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL742C | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL742C_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| BUL742CFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching |
| BUL743 | 功能描述:兩極晶體管 - BJT H VL fast-switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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