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參數資料
| 型號： | BUL76A |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| 中文描述： | 60 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | BUL76A |
BUL76A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
HIGH CURRENT
EFFICIENT POWER SWITCHING
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Junction Temperature
Operating and Storage Temperature Range
350V
160V
10V
60A
12A
85W
150°C
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
1 2 3
1
10.2
6
4.5
1.3
3.6 Dia.
1.3
1
1
0.85
2.54
0.5
2.54
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO-220
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相關代理商/技術參數 |
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|---|---|
| BUL76B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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| BUL770-S | 制造商:Bourns / JW Miller 功能描述:Trans GP BJT NPN 400V 2.5A 3-Pin(3+Tab) TO-220 制造商:Bourns Inc 功能描述:TRANS GP BJT NPN 400V 2.5A 3PIN TO-220 - Tape and Reel |
| BUL791 | 制造商:Bourns Inc 功能描述: |
| BUL804 | 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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