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參數資料
| 型號： | BULD38 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 108K |
| 代理商： | BULD38 |
BULD38
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
I
SGS-THOMSON PREFERRED SALESTYPE
I
HIGH VOLTAGE CAPABILITY
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
FULLY CHARACTERISED AT 125
o
C
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BULD38 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
January 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
800
400
9
5
8
2
4
30
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
3
2
IPAK
(TO-251)
(Suffix ”-1”)
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| BULD38-1 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| BULK128D-A | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | SOT-82 |
| BULK128D-B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULK26D | |
| BULK382 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | SOT-82 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BULD38-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| BULD39D-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor |
| BULD39DT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor |
| BULD3N7T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD3P5T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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