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參數資料
| 型號： | BULD39DT4 |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor |
| 中文描述： | 高壓快速NPN電源開關晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 238K |
| 代理商： | BULD39DT4 |
May 2006
Rev 1
1/12
12
Order codes
Part Number
Marking
Package
Packing
BULD39D-1
IPAK
Tube
BULD39DT4
DPAK
Tape & reel
BULD39D-1
BULD39DT4
High Voltage Fast-Switching
NPN Power Transistor
General features
■
NPN transistor
■
High voltage capability
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
High ruggedness
■
Surface-mounting DPAK (TO-252) power
package in tape & reel (suffix “T4”)
■
Through-hole IPAK (TO-251) power package
in tube (suffix “-1”)
■
In compliance with the 2002/93/EC European
Directive
Description
The device in manufactured using high voltage
Multi-epitaxial Planar technology to enhance
switching speeds while maintaining wide RBSOA.
The BUL series is designed for use in electronics
transformer for halogen lamps.
Applications
■
Electronics transformer for halogen lamps
■
Switch mode power supplies
Internal schematic diagram
IPAK
TO-251
(suffix “-1”)
3
2
1
1
3
DPAK
TO-252
(suffix “T4”)
www.st.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BULD3N7T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD3P5T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD50 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50KC | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50SL | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
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