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參數資料
| 型號： | BUR51S |
| 英文描述： | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 60A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管|叩| 250V五（巴西）總裁| 60A章一（c）|至3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 10K |
| 代理商： | BUR51S |
BUR51S
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
250
V
I
C(CONT)
60
A
h
FE
@ 4/40 (V
CE
/ I
C
)
15
-
f
t
16M
Hz
P
D
350
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO3 (TO204AE)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
(c3
25.15 (0.99)
10.67 (0.42)
3
3
2
3
1
1
3.84 (0.151)
1
1
7.92 (0.312)
2
(
m
6.35 (0.25)
1.52 (0.06)
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