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參數資料
| 型號： | BUW14 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 63K |
| 代理商： | BUW14 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
0.4
MAX.
1000
450
0.5
1
20
-
UNIT
V
V
A
A
W
μ
s
T
mb
≤
60 C
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
emitter
2
collector
3
base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
0.5
1
0.2
0.3
0.3
20
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
mb
≤
60 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
100
MAX.
4.5
-
UNIT
K/W
K/W
1
2
3
b
c
e
1
Turn-off current.
March 1992
1
Rev 1.000
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相關代理商/技術參數 |
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| BUW22A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
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| BUW22P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 6A I(C) | TO-220AB |
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