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參數資料
| 型號： | BUZ10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 50V-0.06Ω-23A -TO-220 STripFETTM Power MOSFET(功率MOSFET) |
| 中文描述： | N溝道50V -0.06Ω- 23A條至220 STripFETTM功率MOSFET（功率MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 42K |
| 代理商： | BUZ10 |
BUZ10
N - CHANNEL 50V - 0.06
- 23A -TO-220
STripFET
POWER MOSFET
s
TYPICAL RDS(on) = 0.06
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
September 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
50
V
VDGR
Drain- gate Volt age (RGS =20 k
)
50
V
VGS
G ate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC23
A
IDM
Drain Current (pulsed)
92
A
Ptot
T otal Dissipation at Tc =25
oC75
W
Tstg
Storage Temperat ure
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
DIN HUMIDI TY CAT EGORY (DI N 40040)
E
I EC CLIMATIC CAT EGORY (DIN I EC 68-1)
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
T YPE
VDSS
RDS(on)
ID
BUZ10
50 V
< 0.07
23 A
1
2
3
TO-220
1/6
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