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參數資料
| 型號： | BUZ903P |
| 英文描述： | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
| 中文描述： | N溝道功率MOSFET為音頻應用（不適用馬鞍山溝道功率型場效應管（用于音頻電路）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | BUZ903P |
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ902P
BUZ903P
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
8A
8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
N–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY P–CHANNEL
BUZ907P & BUZ908P
Pin 1 – Gate
TO-247
Pin 2 – Source
Case – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ902P
220V
BUZ903P
250V
相關PDF資料 |
PDF描述 |
|---|---|
| BUZ902 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
| BUZ903 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
| BUZ903DP | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
| BUZ902DP | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
| BUZ903D | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUZ905 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:Semelab 功能描述:TO3 -160V -8A 125W P CHANNEL MOSFET 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -160V, 8A, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 8A TO-3 |
| BUZ905 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ905D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:SEMELAB 功能描述:MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:160V; On Resistance Rds(on):750mohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:250W; No. of Pins:2 ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 16A TO-3 |
| BUZ905D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ905DP | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 16A TO-3PBL |
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