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參數(shù)資料
型號: BUZ906
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場效應(yīng)管(用于音頻電路))
文件頁數(shù): 1/4頁
文件大?。?/td> 41K
代理商: BUZ906
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905
BUZ906
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
MECHANICAL DATA
Dimensions in mm
3
3
1
R 4.0 ± 0.1
R 4.4 ± 0.2
1.50
Typ.
11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
1
2
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
P–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
N–CHANNEL ALSO AVAILABLE AS
BUZ900 & BUZ901
Pin 1 – Gate
TO–3
Pin 2 – Drain
Case – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905
-160V
BUZ906
-200V
相關(guān)PDF資料
PDF描述
BUZ907DP P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ908DP P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ907D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ908D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ907P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUZ906 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
BUZ906D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3
BUZ906D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
BUZ906DP 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3PBL
BUZ906DP 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264
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