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參數資料
| 型號： | BY329X-1700S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Damper diode fast, high-voltage |
| 中文描述： | 1700 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 33K |
| 代理商： | BY329X-1700S |
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1700S
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
High thermal cycling performance
Isolated mounting tab
V
R
= 1700 V
V
F
≤
1.5 V
I
F(PEAK)
= 6 A
I
FSM
≤
60 A
t
rr
≤
170 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
Thedevice isintendedfor useinTV
receivers and PC monitors.
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
RSM
Peak non repetitive reverse
voltage
V
RRM
Peak repetitive reverse voltage
V
RWM
Crest working reverse voltage
I
F(peak)
Peak working forward current
CONDITIONS
MIN.
-
MAX.
1700
UNIT
V
-
-
-
-
-
-
-
1700
1300
6
6
14
10
60
V
V
A
A
A
A
A
f = 16 kHz
f = 64 kHz
t = 25
μ
s;
δ
= 0.5; T
hs
≤
91 C
I
FRM
I
F(RMS)
I
FSM
Peak repetitive forward current
RMS forward current
Peak non-repetitive forward
current
t = 10 ms
sinusoidal; T
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
T
j
Storage temperature
Operating junction temperature
-40
-
150
150
C
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
k
1
a
2
1
2
case
September 1998
1
Rev 1.200
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