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參數(shù)資料
| 型號(hào)： | BYQ28EB-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Connector assemblies, Network cables; Drop Ship:Yes |
| 中文描述： | 5 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 62K |
| 代理商： | BYQ28EB-200 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
≤
0.895 V
I
O(AV)
= 10 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
anode 1
2
cathode
1
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYQ28E/ BYQ28EB/ BYQ28ED
MIN.
MAX.
UNIT
-150
150
-200
200
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
150
200
V
V
R
I
O(AV)
-
-
150
200
V
A
square wave;
δ
= 0.5; T
mb
≤
119 C
10
I
FRM
square wave;
δ
= 0.5; T
mb
≤
119 C
-
10
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
μ
s;
δ
= 0.001
-
-
50
55
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Peak non-repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
1
. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
j
-
150
C
T
stg
- 40
150
C
k
a1
1
a2
3
2
1
2
3
tab
1
3
tab
2
1 2 3
tab
October 1998
1
Rev 1.300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYQ28EB-200,118 | 制造商:NXP Semiconductors 功能描述: |
| BYQ28EB-200/31 | 功能描述:整流器 200 Volt 10A 20ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYQ28EB-200/81 | 功能描述:整流器 200 Volt 10A 20ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYQ28EB-200-E3/31 | 功能描述:整流器 200 Volt 10A 20ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYQ28EB-200-E3/45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common Cathode Ultrafast Rectifier |
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