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參數資料
| 型號： | BYT11-600-1000 |
| 廠商： | 意法半導體 |
| 英文描述： | Ultra low drop BICMOS voltage regulator |
| 中文描述： | 快速恢復整流二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 101K |
| 代理商： | BYT11-600-1000 |
BYT 11-600
→
1000
FAST RECOVERY RECTIFIER DIODES
SOFT RECOVERY
VERY HIGH VOLTAGE
SMALL RECOVERY CHARGE
APPLICATIONS
ANTISATURATION DIODES FOR TRANSIS-
TOR BASE DRIVE
SNUBBER DIODES
November 1994
F 126
(Plastic)
Symbol
Parameter
Value
Unit
I
FRM
Repetive Peak Forward Current
t
p
≤
20
μ
s
20
A
I
F (AV)
Average Forward Current *
T
a =
75
°
C
δ
= 0.5
1
A
I
FSM
Surge non Repetitive Forward Current
t
p
= 10ms
Sinusoidal
35
A
P
tot
Power Dissipation *
T
a
=
55
°
C
1.25
W
T
stg
T
j
Storage and Junction Temperature Range
- 55 to + 150
- 55 to + 150
°
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°C
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
R
th (j - a)
Junction-ambient*
60
°
C/W
THERMAL RESISTANCE
Symbol
Parameter
BYT 11-
Unit
600
800
1000
V
RRM
Repetitive Peak Reverse Voltage
600
800
1000
V
* On infinite heatsink with 10mm lead length.
1/4
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