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參數資料
型號: BYV118B-45
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes Schottky barrier
中文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, SOT-404, 3 PIN
文件頁數: 1/6頁
文件大小: 36K
代理商: BYV118B-45
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 35 V/ 40 V/ 45 V
I
O(AV)
= 10 A
V
F
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118 series is supplied in the SOT78 conventional leaded package.
The BYV118B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
40
40
40
UNIT
BYV118-
BYV118B-
35
35
35
45
45
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
35
40
45
V
V
R
I
O(AV)
T
mb
108 C
square wave;
δ
= 0.5;
T
mb
127 C
-
-
35
40
10
45
V
A
I
FRM
square wave;
δ
= 0.5;
T
127 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
10
A
I
FSM
-
-
100
110
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1
. It is not possible to make connection to pin 2 of the SOT404 pckage.
- 65
175
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
May 1998
1
Rev 1.300
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