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參數資料
| 型號： | BYV143 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes schottky barrier |
| 中文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數： | 1/5頁 |
| 文件大小： | 33K |
| 代理商： | BYV143 |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV143F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic
envelope,
forward voltage drop, absence of
stored
charge.
reversesurgecapability.Thedevices
areintendedforuseinswitchedmode
power supplies and high frequency
circuits
in
general
conductionandzeroswitchinglosses
are important.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
featuring
low
BYV143F-
35
35
40
40
45
45
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
V
and
guaranteed
V
F
I
O(AV)
0.62
20
0.62
20
0.62
20
V
A
where
low
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-40
40
40
40
20
UNIT
-35
35
35
35
-45
45
45
45
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current, per diode
-
-
-
-
V
V
V
A
T
hs
≤
112 C
square wave;
δ
= 0.5;
T
hs
≤
87 C
I
O(RMS)
-
20
A
I
FRM
-
30
A
T
≤
87 C
t = 10 ms
t = 8.3 ms
sinusoidal T
= 125 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
-
-
100
110
A
A
I
2
t
I
RRM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
-
-
50
1
A
2
s
A
I
RSM
t
p
= 100
μ
s
-
1
A
T
stg
T
j
-65
-
175
150
C
C
1 2 3
case
k
a1
1
a2
3
2
August 1996
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BYV143F-40 | Rectifier diodes schottky barrier |
| BYV143F-45 | Rectifier diodes schottky barrier |
| BYV143-40AM | DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-40M | DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-40MA | 16-Bit Bus Switch w/25 Ohm Resistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BYV143-40AM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-40M | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-40MA | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-40RM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
| BYV143-45AM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS |
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