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參數資料
| 型號： | BYV32-100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Shaft; Style: 2 - light; Applicable Model: ME(S) |
| 中文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 34K |
| 代理商： | BYV32-100 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivatedhigh efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits
in
general
conduction and switching losses are
essential.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
BYV32-
100
100
150
150
200
200
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
V
V
F
I
O(AV)
0.85
20
0.85
20
0.85
20
V
A
where
low
t
rr
25
25
25
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-150
150
150
150
20
UNIT
-100
100
100
100
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
-
-
-
-
V
V
V
A
square wave
δ
= 0.5; T
mb
≤
115 C
sinusoidal
a = 1.57; T
mb
≤
118 C
-
18
A
I
O(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
28
20
A
A
T
≤
115 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
-
-
125
137
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
78
150
150
A
2
s
C
C
-40
-
1 2 3
tab
k
a1
a2
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BYV32-100/45 | 功能描述:整流器 100 Volt 18A 25ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32-100-E3/45 | 功能描述:整流器 18 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32-100HE3/45 | 功能描述:整流器 100 Volt 18A 25ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32-100M | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS |
| BYV32-100SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual Fast Recovery common cathode Rectifier |
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