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參數資料
型號: BYV79EB-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 14 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數: 1/7頁
文件大小: 50K
代理商: BYV79EB-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV79EB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
0.9 V
I
F(AV)
= 14 A
I
RRM
= 0.2 A
t
rr
30 ns
GENERAL DESCRIPTION
PINNING
SOT404
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
1
no connection
2
cathode
1
The BYV79EB series is supplied in
the
surface
mounting
package.
SOT404
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV79EB
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
F(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified forward
current
2
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current
-
-
-
-
V
V
V
A
T
mb
145C
square wave
δ
= 0.5; T
mb
120 C
14
I
FRM
-
28
A
T
120 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
150
160
A
A
I
RRM
I
RSM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
Non-repetitive peak reverse
current
Storage temperature
Operating junction temperature
1. It is not possible to make connection to pin 2 of the SOT404 package
2. Neglecting switching and reverse current losses.
-
-
0.2
0.2
A
A
t
p
= 100
μ
s
T
stg
T
j
-40
-
150
150
C
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
k
a
3
tab
1
3
tab
2
July 1998
1
Rev 1.100
相關PDF資料
PDF描述
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