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參數資料
| 型號： | BYZ50A33R |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Precision 1 A regulators |
| 文件頁數： | 1/2頁 |
| 文件大小： | 163K |
| 代理商： | BYZ50A33R |
1
04.09.2002
BYZ 50A22 ... BYZ 50A47
BYZ 50K22 ... BYZ 50K47
Silicon Protectifiers
with TVS characteristics
High-temperature diodes
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
Nominal current – Nennstrom
50 A
Nominal breakdown voltage
Nominale Abbruch-Spannung
19.8 ... 51.7 V
Metal press-fit case with plastic cover
Metall-Einpregehuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergumasse UL94V-0 klassifiziert
Dimensions / Mae in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode Cathode
BYZ 50A22
BYZ 50A27
BYZ 50A33
BYZ 50A39
BYZ 50A47
Breakdown voltage
Abbruch-Spannung
I
T
= 100 mA
V
BRmin
[V] V
BRmax
19.8
24.3
29.7
35.1
42.3
Reverse voltage
Sperrspannung
I
R
= 5 A
V
R
[V]
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
Max. clamping voltage
Max. Begrenzerspanng.
at / bei I
PP
, t
p
= 1m s
V
C
[V] I
PP
[A]
31,9
39,1
47,7
56,4
67,8
BYZ 50K22
BYZ 50K27
BYZ 50K33
BYZ 50K39
BYZ 50K47
24.2
29.7
36.3
42.9
51.7
242
192
160
134
112
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
C
= 150 C
I
FAV
50 A
Peak forward surge current, 50 / 60 Hz half sine-wave
Stostrom für eine 50 / 60 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
400 / 450 A
Rating for fusing – Grenzlastintegral, t <10 ms
T
A
= 25 C
i
2
t
800 A
2
s
Forward voltage – Durchlaspannung
T
j
= 25 C
I
F
= 50 A
V
F
< 1.1 V
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+215 C
– 50…+215 C
±01
13
5
±
1
±
1.3
±0.1
11
R
k
12.75
2
±
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