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參數資料
| 型號： | BZW04P7V0 |
| 廠商： | GE Security, Inc. |
| 英文描述： | TransZorb Transient Voltage Suppressor(TransZorb瞬變電壓抑制器) |
| 中文描述： | TransZorb瞬態電壓抑制器（TransZorb瞬變電壓抑制器） |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | BZW04P7V0 |
BZW04P-5V8 THRU BZW04-376
T
RANS
Z
ORB
TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage -
5.8 to 376 Volts
Peak Pulse Power
- 400 Watts
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
400W peak pulse power
capability with a 10/1000
μ
s waveform,
repetition rate (duty cycle): 0.01%
Excellent clamping
capability
Low incremental surge resistance
Fast response time: typically less
than 1.0 ps from 0 Volts to V
(BR)
for uni-
directional and 5.0ns for bi-directional types
Typical I
D
less than 1
μ
A above 10V rating
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic over passivated
junction
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
For unidirectional types the color band denotes
the cathode, which is postitive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use add suffix Letter "B" (e.g. BZW04P-6V4B).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak pulse power dissipation with a 10/1000
μ
s waveform
(NOTE 1, FIG. 1)
Peak pulse current with a 10/1000
μ
s waveform
(NOTE 1)
Steady state power dissipation at T
L
=75°C
lead lengths, 0.375” (9.5mm)
(NOTE 2)
Peak forward surge current, 8.3ms single half
Sine-wave superimposed on rated load
(JEDEC Method)
(NOTE 3)
unidirectional only
Maximum instantaneous forward voltage at 25A
(NOTE 4)
uni-directional only
P
PPM
Minimum 400
Watts
I
PPM
SEE TABLE 1
Amps
P
M(AV)
1.0
Watts
I
FSM
40.0
Amps
V
F
3.5/5.0
Volts
Operating junction and storage temperature range
T
J
, T
STG
-55 to +175
°C
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5V max. for devices of V
(BR)
≤
220V and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
1/5/98
DO204AL
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
NOTE:
Lead diameter is for suffix "E" part numbers
Dimensions are in inches
and
(millimeters)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BZW04P85/4 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 85V 7% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| BZW04P85/54 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 85V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| BZW04P85-E3/4 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 85V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| BZW04P85-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 85V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| BZW04P85-E3/54 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 85V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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