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參數(shù)資料
| 型號(hào)： | C08C |
| 英文描述： | POWER SCHOTTKY RECTIFIER |
| 中文描述： | 混合信號(hào)CMOS工藝和專(zhuān)門(mén)模擬 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 293K |
| 代理商： | C08C |
Simplified Cross-Section of 5V CMOS
5V NMOS
n+
n+
G
D
p+
p+
p+
n+
B
B
G
S
S
D
5V PMOS
P-Well
N-Well
substrate n or p
C08C 0.8μm 5V CMOS Process
C08C Overview
0.8μm 5V CMOS process, compatible with most
0.8μm CMOS processes in the industry.
Twin-tub, P or N type epi or bulk substrates
Single or double poly
Two or three layer metal process
Features
Propagation delay: Tpd = 200ps
High value (10k
:
/sq.) and low TCR poly
resistor options
Fully transportable to C08E and C08G high
voltage processes
ProToDuction
￥
option for low-cost
prototyping
BSIM3v3.22 models available in Hspice and
Spectre
Comprehensive mixed signal Cadence
Foundry Design Kit (FDK) available
Mixed Signal Capabilities
5V double poly capacitor (1.05fF/μm2)
High value poly resistor option (10k
:
/sq)
5V 0.8μm cmos
Polysilicon fuses
Digital gate count 1.8K gates/mm2
Applications
All 5V digital, analog or mixed signal circuits
Layout Rules
Layer
Width (μm)
Poly 1
0.8
Poly2
1.0
Contact
0.9x0.9
Metal 1
1.1
Via
1.0x1.0
Metal 2
1.2
Via 2
2.0x2.0
Metal 3
3.0
Space (μm)
0.9
1.2
0.8
1.0
1.0x1.0
1.1
2.0
2.4
DALSA
Semiconductor’s
proven ability to
transfer and
develop
customized
processes is
unmatched in
the industry
1
26-Sep-02
03-70-00146-00
www.dalsasemi.com
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