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參數(shù)資料
| 型號(hào)： | C103B |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIER |
| 中文描述： | 0.8 A, 200 V, SCR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 121K |
| 代理商： | C103B |
(SEE REVERSE SIDE)
R0
C103Y
C103YY
C103A
C103B
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS
TO-92 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM 30 60
RMS On-State Current (TC=60°C)
IT(RMS)
Peak One Cycle Surge
ITSM
Peak Forward Gate Current
IGM
Peak Reverse Gate Voltage
VGM
Peak Gate Power Dissipation (tp=8.3ms)
PGM
Average Gate Power Dissipation
PG(AV)
Storage Temperature
Tstg
Junction Temperature
TJ
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IDRM, IRRM
IDRM, IRRM
IGT
IGT
IH
IH
VGT
VGT
VGT
VTM
ITM=1.0A
dv/dt
VD=VDRM, TC=125°C, RGK=1K
C103Y C103YY C103A C103B UNITS
100 200
0.8
8.0
0.5
8.0
1.0
0.01
-65 to +150
-65 to +125
V
A
A
A
V
W
W
°C
°C
MIN
0.1
TYP
20
MAX
1.0
50
200
500
5.0
10
0.8
1.0
1.5
UNITS
μ
A
μ
A
μ
A
μ
A
mA
mA
V
V
V
V
V/
μ
s
Rated VDRM, VRRM, RGK=1K
Rated VDRM, VRRM, TC=125°C, RGK=1K
VD=6.0V, RL=100
, RGK=1K
VD=6.0V, RL=100
, RGK=1K
, TC=-65°C
RGK=1K
RGK=1K
, TC=-65°C
VD=6.0V, RL=100
VD=6.0V, RL=100
, TC=-65°C
VD=6.0V, RL=1K
, TC=125°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C103Y | SILICON CONTROLLED RECTIFIER |
| C103YY | SILICON CONTROLLED RECTIFIER |
| C106A1 | SCRs |
| C106B1 | SCRs |
| C106C1 | SCRs |
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