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參數資料
型號: C106F
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: SCRs 4 AMPERES RMS 50 thru 600 VOLTS
中文描述: 4 A, 50 V, SCR, TO-225AA
文件頁數: 1/4頁
文件大小: 111K
代理商: C106F
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Triode Thyristors
. . . Glassivated PNPN devices designed for high volume consumer applications such
as temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1 k
)
(TC = –40
°
to 110
°
C)
C106F
C106A
C106B
C106D
C106M
VDRM
or
VRRM
50
100
200
400
600
Volts
RMS Forward Current
(All Conduction Angles)
IT(RMS)
4
Amps
Average Forward Current
(TA = 30
°
C)
IT(AV)
2.55
Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110
°
C)
ITSM
20
Amps
Circuit Fusing (t = 8.3 ms)
I2t
1.65
A2s
Peak Gate Power
PGM
PG(AV)
IGFM
0.5
Watt
Average Gate Power
0.1
Watt
Peak Forward Gate Current
0.2
Amp
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however,
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
(cont.)
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by C106/D
SEMICONDUCTOR TECHNICAL DATA
CASE 77-08
(TO-225AA)
STYLE 2
SCRs
4 AMPERES RMS
50 thru 600 VOLTS
K
A
G
K
A
G
A
*Motorola preferred devices
相關PDF資料
PDF描述
C106D1 Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor(4A(均方根值),400V敏感門硅控整流器反向截止晶閘管)
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相關代理商/技術參數
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