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參數資料
| 型號： | C122F1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| 中文描述： | 8 A, 50 V, SCR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-07, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | C122F1G |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
C122F1/D
C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
halfwave silicon gatecontrolled, solidstate devices are needed.
Features
Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 200 Volts
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1) (T
J
= 25 to 100
°
C, Sine Wave,
50 to 60 Hz; Gate Open)
C122F1
C122B1
V
DRM,
V
RRM
50
200
V
On-State RMS Current
(180
°
Conduction Angles; T
C
= 75
°
C)
I
T(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
C
= 75
°
C)
I
TSM
90
A
Circuit Fusing Considerations (t = 8.3 ms)
I
2
t
34
A
2
s
Forward Peak Gate Power
(Pulse Width = 10 s, T
C
= 70
°
C)
P
GM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 70
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width = 10 s, T
C
= 70
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
K
G
A
TO220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
Device
Package
Shipping
ORDERING INFORMATION
C122F1
TO220AB
500 Units / Box
C122B1
TO220AB
500 Units / Box
A
Y
W
C122F1
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
= Diode Polarity
MARKING
DIAGRAM
123
4
A YW
C122F1G
AKA
C122F1G
TO220AB
(PbFree)
500 Units / Box
C122B1G
TO220AB
(PbFree)
500 Units / Box
相關PDF資料 |
PDF描述 |
|---|---|
| C122B1 | Silicon Controlled Rectifier Reverse Blocking Thyristor(8A（均方根值）,200V硅控整流器反向截止晶閘管) |
| C122F1 | Silicon Controlled Rectifier Reverse Blocking Thyristor(8A（均方根值）,50V硅控整流器反向截止晶閘管) |
| C122F1 | SCRs 8 AMPERES RMS 50 thru 800 VOLTS |
| C122A1 | SILICON CONTROLLED RECTIFIERS |
| C122D1 | SILICON CONTROLLED RECTIFIERS |
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