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參數資料
| 型號： | C12C |
| 英文描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 中文描述： | 混合信號CMOS工藝和專門模擬 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 50K |
| 代理商： | C12C |
1.2 Micron CMOS Process Family
Double Poly / Double Metal,
2.4
μ
m Poly and Metal I Pitch,
5.5 Volts Maximum Operating Voltage,
Twin-tub process on P-type or N-type wafers,
ProToDuction
TM
Option for low cost prototypes,
Triple Metal option available,
.
Low leakage process
Standard cell library available
Features
Description
1.2μ
m
5volts
Units
Metal I or II pitch (width/space)
1.2 / 1.2
μ
m
Metal III pitch (width/space)
5.0 / 5.0
μ
m
Poly pitch (width/space)
1.2 / 1.2
μ
m
Contact
1.2 x 1.2
μ
m
Via 1 & 2
1.4 x 1.4
μ
m
Gate geometry
1.2
μ
m
N-well junction depth
4.0
μ
m
P-well junction depth
4.0
μ
m
N+ junction depth
0.20
μ
m
P+ junction depth
0.31
μ
m
Gate oxide thickness
225
Inter poly oxide thickness
390
Process parameters
The
1.2μ
m process provides flexibility,
speed and packing density needed in mixed signal
designs. The aggressive design rules on both metal
layers are comparable to most 0.8
μ
m processes.
Also, the overall design rules are compatible with
most other 1.2um processes making second
sourcing easy.
Technology outline
1.2 MICRON - 5 volts
Units
Conditions
N Channel
min. typ. max.
P Channel
min. typ. max.
Vt (10x
1.2μ
m)
0.55
0.70
0.85
0.55
0.70
0.85
V
saturation
Ids (10x
1.2μ
m)
220
115
μ
A/
μ
m
μ
A/V
2
Vds=Vgs=5v
Gain
β
(10x
10μ
m)
73
24
Body Factor (50x50
μ
m)
0.56
0.73
√
v
Bvdss
10
15
10
12
V
Ids=20nA
Subthreshold Slope
90
90
mV/dec.
Vds=0.1v
Maximum Substrate
Current (50x1.2
μ
m)
0.20
.01
μ
A/
μ
m
Vds=5.5v
Vgs=2.7v
Field Threshold
10
15
10
15
V
Ids = 14
μ
A
L Effective
1.0
0.82
μ
m
L drawn =
1.5μ
m
Material Achieved
Latchup Free Process on Non-Epi
for Reliability against Moisture
Plasma Silicon Nitride Passivation
Planarization with non-etch-back
SOG Processes
Drain Engineered Structure to Ensure
Reliability against Hot-Carrier Injection
MOSFET Electrical Parameters
State-of-the-art Metal technology :
Ti/TiN/Al/TiN sandwich
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
email: dalsasales@dalsasemi.com
Fax
www.dalsasemi.com
相關PDF資料 |
PDF描述 |
|---|---|
| C1309-01 | POWER SCHOTTKY RECTIFIERS |
| C1309-02 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| C1309-04 | LOW DROP OR-ING POWER SCHOTTKY DIODE |
| C1309-06 | LOW DROP OR-ING POWER SCHOTTKY DIODE |
| C1323 | LOW DROP POWER SCHOTTKY RECTIFIER |
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