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參數資料
| 型號： | C3025 |
| 廠商： | IMP INC. |
| 英文描述： | Process C3025 CMOS 3Um 10 Volt Analog |
| 中文描述： | 工藝C3025的CMOS 3Um 10伏模擬 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 26K |
| 代理商： | C3025 |
93
IMP, Inc.
Process C3025
CMOS 3
μ
m
10 Volt Analog
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTF
P(N)
Minimum
0.65
Typical
0.85
0.87
48
3.40
0.550
Maximum
1.05
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x4
μ
m
100x4
μ
m
100x100
μ
m
100x4
μ
m
Per side
40
3.05
56
3.75
16.5
12
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
Minimum
–0.7
Typical
–0.9
0.75
16
3.35
0.8
Maximum
–1.1
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x4
μ
m
100x4
μ
m
100x100
μ
m
100x4
μ
m
Per side
13
3.00
19
3.70
–16.5
–12
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρ
P-well(f)
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
P1P2
ρ
POLY1
ρ
POLY2
M1
T
PASS
Minimum
3.25
13
Typical
5.25
20
0.8
80
0.7
48
66
22
22
50
200+900
Maximum
7.25
27
Unit
K
/
o
/
o
μ
m
/
o
μ
m
nm
nm
/
o
/
o
m
/
o
nm
Comments
P-well
50
100
45
56
15
15
51
76
30
30
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
C
OX
C
M1P
C
M1S
C
P1P2
Minimum
0.68
0.047
0.027
0.453
Typical
0.72
0.0523
0.30
0.523
Maximum
0.78
0.0575
0.034
0.617
Unit
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
Comments
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
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