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參數資料
| 型號： | C30616ESC-04-SC |
| 英文描述： | Ultrafast recovery - high voltage diode |
| 中文描述： | 光電 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 283K |
| 代理商： | C30616ESC-04-SC |
EVERYTHING
IN A
NEW
LIGHT.
Applications
High-speed communications
SONET/ATM, FDDI
Datalinks & LANs
Fiber optic sensors
Description
High-speed InGaAs photodiodes from
PerkinElmer Optoelectronics are
designed for use in OEM fiber optic
communications systems and high-
speed receiver applications including
trunk line, LAN, fiber-in-the-loop and
data communications. Ceramic
submount packages are available for
easy integration into high-speed
SONET, FDDI, or datalink receiver
modules, or as back-facet power
monitors in laser diode modules.
Photodiodes are available in hermetic
TO-18 packages, or in connectorized
receptacle packages with industry
standard ST, FC or SC connectors.
These are designed for mating to either
single or multimode fibers. Photodiodes
are also available in a fibered package
with either single or multimode fiber
pigtail, which can be terminated with
either an ST, FC or SC connector.
Receptacled and fibered packages use
a ball-lens TO-18 package to maximize
coupling efficiency. All devices are
planar passivated and feature proven
high reliability mounting and contacting.
An MTTF of >10
9
hours (approximate-
ly 105 years) at 50
o
C has been
demonstrated to date from standard
production samples.
Quality and Reliability
PerkinElmer Optoelectronics is
committed to supplying the highest
quality product to our customers, and
we are certified to meet ISO-9001 and
operate to MIL-Q-9858A and AQAP-1
quality standards. Process control is
maintained through annual re-
qualification of production units and
includes extensive electrical, thermal
and mechanical stress as well as an
extended lifetest. In addition, every
wafer lot is individually qualified to meet
responsivity, capacitance and dark
current specifications, and reliability is
High-Speed InGaAs PIN
Photodiodes
C30616, C30637, C30617, C30618
demonstrated with an extended high temperature burn-
in at 200
o
C for 168 hours (V
R
= 10V), ensuring an
MTTF > 10
7
hours at 50
o
C (EA= 0.7eV). Finally, all
production devices are screened with a 16 hour, 200
o
C
burn-in (V
R
= 10V) and tested to meet responsivity,
spectral noise and dark current specifications.
Features
50, 75, 100, 350 μm diameters
High responsivity at 1300 and 1550nm
Low capacitance for high bandwidths (to 3.5GHz)
Available in various package options
相關PDF資料 |
PDF描述 |
|---|---|
| C30616ESC-04-ST | Ultrafast recovery - high voltage diode |
| C30616ESC-07-FC | Ultrafast recovery - 1200 V diode |
| C30616ESC-07-SC | Ultrafast recovery - 1200 V diode |
| C30616ESC-07-ST | Ultrafast recovery - 1200 V diode |
| C30616EST-04-FC | Ultrafast recovery - 1200 V diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| C30616ESC-04-ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616EST-04-FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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