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參數資料
| 型號： | C770PS |
| 英文描述： | TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE |
| 中文描述： | 晶閘管|反向導電| 1.7KV五（DRM）的|對200VAR111 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 39K |
| 代理商： | C770PS |
PG: 6.078 sh1 12/1/98
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C770
ON-STATE CHARACTERISTIC
On-state current , It (amperes)
On-state Voltage , Vt (volts)
Process Maximum
Pulsed Current
Initial Tj = 125 degC
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
On-Time (milliseconds)
Rthj-case(dc) =
.012 degC/watt
.01
.001
.0001
.00001
.02
1
10
C770
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
Pulse Width - milliseconds
I2t (amp-sq-sec)
5.E6
10.E6
1.E6
10
50
100
S
ILICON
P
OWER
CO
RPORATION
175 GREAT VALLEY PARKWAY, MALVERN, PA 19355
USA
SPCO
Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction
is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate
structure.It is supplied in an industry accepted disc-type package , ready to mount using
commercially available heat dissipators and mechanical clamping hardware.
INVERTER THYRISTOR
C770 & C770A
77mm / 1800V / 60-80us
Disc-type ceramic PRESSPAK package
Blocking Voltage Code
C770__
C770A__
V
DRM
/V
RRM
MODEL
-40 to +125
o
C
———————————-
C770 PN
C770 PS
C770 PM
C770 PE
C770 PD
1800 Volts
1700
1600
1500
1400
Gate Drive Requirements:
open circuit voltage
internal impedance
rise time of s.s. current
minimum duration
30-40 V
10
0.5 - 1
μ
s
10
μ
s
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