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參數資料
| 型號： | C771LT |
| 英文描述： | FAST RECOVERY RECTIFIER DIODE |
| 中文描述： | 晶閘管|反向導電|千伏五（DRM）的|的DO - 200AE |
| 文件頁數： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | C771LT |
SPEC2:
7/31/96
100
1000
10000
0
1
2
3
4
5
6
7
8
On-State Current. It, (A)
On-State Voltage, Vt (V)
process maximum
Tj = 125 C
30000
THERMAL IMPEDANCE
ON-STATE CHARACTERISTIC
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
On-Time (milliseconds)
Rthj-case(dc) =
.012 degC/watt
.01
.001
.0001
.00001
.02
MODEL
V
/ V
Ro
0 to +125
C
@
-40
o
C
volts
C771LS
C771LM
C771LE
C771LD
C771LC
C771LB
C771LA
C771L
2800
2700
2600
2500
2400
2300
2200
2100
2700
2600
2500
2400
2300
2200
2100
2000
Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is
manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.
It is supplied in an industry accepted disc-type package, ready to mount using commercially available
heat dissipators and mechanical clamping hardware.
Gate Drive Requirements:
20 - 30V / 10 ohms / 0.5us risetime
10 - 20 us minimum duration
External Clamping Force
7000 - 9000 lbs.
31.1 - 40.0 kN
INVERTER THYRISTOR
C771
77mm / 2800V / 100us
MECHANICAL OUTLINE
S
ILICON
P
OWER
175 GREAT VALLEY PKWY. MALVERN, PA 19355
USA
CO
RPORATION
B
B
A
20° ±5°
D
C
CL
J
A
Φ
= 4.35 in (110.5 mm)
B
Φ
= 2.88 in (73.2 mm)
D= 1.45 in (36.8 mm)
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