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參數資料
| 型號： | CA3083M |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose High Current NPN Transistor Array |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012-AC |
| 封裝： | MS-012AC, 16 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | CA3083M |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
CA3083
General Purpose High Current NPN
Transistor Array
The CA3083 is a versatile array of five high current (to
100mA) NPN transistors on a common monolithic substrate.
In addition, two of these transistors (Q
1
and Q
2
) are
matched at low current (i.e., 1mA) for applications in which
offset parameters are of special importance.
Independent connections for each transistor plus a separate
terminal for the substrate permit maximum flexibility in circuit
design
.
Pinout
CA3083
(PDIP, SOIC)
TOP VIEW
Features
High I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA (Max)
Low V
CE sat
(at 50mA). . . . . . . . . . . . . . . . . . 0.7V (Max)
Matched Pair (Q
1
and Q
2
)
- V
IO
(V
BE
Match). . . . . . . . . . . . . . . . . . . .
±
5mV (Max)
- I
IO
(at 1mA). . . . . . . . . . . . . . . . . . . . . . . . 2.5
μ
A (Max)
5 Independent Transistors Plus Separate Substrate
Connection
Applications
Signal Processing and Switching Systems Operating from
DC to VHF
Lamp and Relay Driver
Differential Amplifier
Temperature Compensated Amplifier
Thyristor Firing
See Application Note AN5296 “Applications of the
CA3018 Circuit Transistor Array” for Suggested
Applications
Ordering Information
PART NUMBER
(BRAND)
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CA3083
-55 to 125
16 Ld PDIP
E16.3
CA3083M
(3083)
-55 to 125
16 Ld SOIC
M16.15
CA3083M96
(3083)
-55 to 125
16 Ld SOIC Tape
and Reel
M16.15
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
SUBSTRATE
Q
1
Q
2
Q
3
Q
4
Q
5
Data Sheet
September 1998
File Number
481.4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CA3083M96 | 功能描述:TRANSISTOR ARRAY NPN 16-SOIC RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| CA3083MZ | 功能描述:兩極晶體管 - BJT W/ANNEAL TXARRAY 5X NPN 2-MATCHED 16N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CA3083MZ96 | 功能描述:兩極晶體管 - BJT W/ANNEAL TXARRAY 5X NPN 2-MATCHED 16N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CA3083R4339 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CA3083S2064 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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