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參數資料
| 型號： | CA3141E |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-Voltage Diode Array For Commercial, Industrial and Military Applications |
| 中文描述： | 0.025 A, 10 ELEMENT, SILICON, SIGNAL DIODE, MS-001BB |
| 封裝： | MS-001BB, 16 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | CA3141E |
1
Semiconductor
January 1999
CA3141
High-Voltage Diode Array For Commercial,
Industrial and Military Applications
Features
Matched Monolithic Construction
- V
F
Match (Each Diode Pair). . . . 0.55mV At I
F
= 1mA
Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V
R
= 2V
High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
Low Reverse (Leakage) Current . . . . . . . 100nA (Max)
Applications
Balanced Modulators or Demodulators
Analog Switches
High-Voltage Diode Gates
Current Ratio Detectors
Description
The CA3141E High Voltage Diode Array Consists of ten gen-
eral purpose high reverse breakdown diodes. Six diodes are
internally connected to form three common cathode diode
pairs, and the remaining four diodes are internally connected
to form two common anode diode pairs. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the CA3141 extremely useful for a
wide variety of applications in communications and switching
systems.
Pinout
CA3141
(PDIP)
TOP VIEW
Part Number Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CA3141E
-55 to 125
16 Ld PDIP
E16.3
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
D
1
D
2
D
10
D
9
D
3
D
4
D
7
D
8
D
5
D
6
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1999
File Number
906.4
OBSOLETE PRODUCT
or email: centapp@harris.com
NO RECOMMENDED REPLACEMENT
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