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參數資料
| 型號： | CAT22C10LI-20-TE13 |
| 英文描述： | 256-Bit Nonvolatile CMOS Static RAM |
| 中文描述： | 256位非易失性的CMOS靜態RAM |
| 文件頁數： | 1/10頁 |
| 文件大小： | 514K |
| 代理商： | CAT22C10LI-20-TE13 |
2004 by Catalyst Semiconductor, Inc., Patent Pending
Characteristics subject to change without notice
Doc. No. 1082, Rev. O
CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
■
Single 5V Supply
■
Fast RAM Access Times:
–200ns
–300ns
■
Infinite EEPROM to RAM Recall
■
CMOS and TTL Compatible I/O
■
Power Up/Down Protection
■
100,000 Program/Erase Cycles (E
2
PROM)
■
Low CMOS Power Consumption:
–Active: 40mA Max.
–Standby: 30
μ
A Max.
■
JEDEC Standard Pinouts:
–18-pin DIP
–16-pin SOIC
■
10 Year Data Retention
■
Commercial, Industrial and Automotive
Temperature Ranges
■
"Green" Package Options Available
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5
μ
s. The CAT22C10 features unlimited
RAM write operations either through external RAM
PIN CONFIGURATION
PIN FUNCTIONS
Pin Name
Function
A
0
–A
5
Address
I/O
0
–I/O
3
Data In/Out
WE
Write Enable
CS
Chip Select
RECALL
Recall
STORE
Store
V
CC
+5V
V
SS
Ground
NC
No Connect
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when V
CC
is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-pin plastic DIP and 16-
pin SOIC packages.
SOIC Package (J, W)
DIP Package (P, L)
NC
A4
A3
A2
A1
A0
Vss
CS
STORE
NC
A5
I/O3
I/O2
I/O1
I/O0
WE
RECALL
Vcc
1
2
3
4
5
6
7
8
9
14
13
12
11
10
15
16
17
18
1
2
3
4
5
6
7
8
14
13
12
11
10
9
15
16
A1
A0
CS
A2
A3
A4
A5
I/O4
I/O3
I/O2
I/O1
WE
RECALL
Vcc
Vss
STORE
H
A
L
O
G
E
N
F
R
E
E
TM
L
E
A
D
F
R
E
E
相關PDF資料 |
PDF描述 |
|---|---|
| CAT22C10LI-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10P-20-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10P-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10PA-20-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10PA-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CAT22C10LI30 | 功能描述:NVRAM 256bit (64x4) 5V RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT22C10LI-30 | 制造商:ON Semiconductor 功能描述:NVRAM NVSRAM Parallel 256-Bit 5V 18-Pin PDIP 制造商:ON Semiconductor 功能描述:IC NVSRAM 256BIT 300NS DIP-18 |
| CAT22C10LI-30-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10P-20 | 功能描述:NVRAM 256bit (64x4) 5V RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT22C10P-20TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
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