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| 型號： | CD5195 |
| 英文描述： | General Purpose Silicon Diodes(通用硅二極管) |
| 中文描述： | 通用硅二極管（通用硅二極管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | CD5195 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
DESIGN DATA
METALLIZATION:
Top: (Anode)....................Al
Back: (Cathode)..............Au
AL THICKNESS
............25,000 Min
GOLD THICKNESS
........4,000 Min
CHIP THICKNESS
..................10 Mils
TOLERANCES:
ALL
Dimensions ± 2 mils
GENERAL PURPOSE SILICON DIODES
ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VRM
VRWM
I O
I O
IFSM
TYPE
TA=+150
°
C
tp = 1/120 S
TA=25
C
A
V(pk)
V(pk)
mA
mA
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
80
180
250
270
80
180
250
70
180
225
225
70
180
225
200
200
200
400
200
200
200
50
50
50
150
50
50
50
2
2
2
5
2
2
2
VF(1)
IR1 at VRWM
TA+25
°
C
IR2 at VRM
TA+25
°
C
IR3 at VRWM
TA+150
°
C
CAP
=4V
pF
TYPE
V dc
nA dc
μ
A
μ
A dc
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
50
25
25
25
100
100
100
50
100
100
100
5
5
5
25
5
5
5
–
–
–
2.0
–
–
–
24 MILS
12 MILS
1
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CD5196 | 制造商:CDI-DIODE 制造商全稱:Compensated Deuices Incorporated 功能描述:GENERAL PURPOSE SILICON DIODES |
| CD520B7W | 制造商:Cooper Wiring Devices 功能描述: |
| CD520B9W | 制造商:Cooper Wiring Devices 功能描述: |
| CD520C9W | 制造商:Cooper Wiring Devices 功能描述: |
| CD521A101 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
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