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參數資料
| 型號： | CD83 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | CD83 |
NPN SILICON POWER TRANSISTOR
CD83
TO126
Plastic Package
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
UNITS
V
V
V
A
A
W
T
j,
T
stg
oC
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL TEST CONDITION
I
CBO
I
EBO
*h
FE
I
C
=500mA, V
CE
=2V
I
C
=3A, V
CE
=2V
*V
CE (sat)
I
C
=3A, I
B
=60mA
*V
BE (sat)
I
C
=3A, I
B
=60mA
MIN
TYP
MAX
1.0
1.0
560
UNITS
μ
A
μ
A
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
= 0
100
75
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
0.5
1.5
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
T
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
120
45
MHz
pF
C
ob
Pulse Test: tp=300
m
s, Duty Cycle=2%
CD83Rev240205E
VALUE
60
20
6.0
5.0
8.0
0.9
- 55 to +150
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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