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參數資料
| 型號： | CD9018J |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 157K |
| 代理商： | CD9018J |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD9018
TO-92
Plastic Package
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T
a
=25oC
Junction Temperature
Storage Temperature Range
UNITS
V
V
V
mA
mW
oC
oC
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
SYMBOL
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
TEST CONDITION
I
C
=3mA, I
B
=0
I
C
=10
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=15V, I
E
= 0
V
EB
=3V, I
C
= 0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
MIN
15
30
5
TYP
MAX
UNITS
V
V
V
nA
nA
50
100
273
0.5
29
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
SYMBOL
C
ob
TEST CONDITION
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=10V, I
C
=5mA,
f=100MHz
V
CE
=10V, I
C
=1mA,
f=60MHz
MIN
TYP
MAX
UNITS
pF
1.7
Transition Frequency
f
T
600
MHz
Noise Figure
NF
5.0
dB
h
FE
Rank Classfication
Rank D
h
FE
29 - 44
E F G
40 - 59
54 - 80 72 - 108
I
J
132 - 198 182 - 273
CD9018Rev_3 170403E
H
97- 146
5
30
400
V
CEO
V
CBO
V
EBO
T
stg
- 55 to +125
I
C
P
D
T
j
125
SYMBOL
VALUE
15
30
EBC
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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