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參數資料
| 型號： | CDBW160 |
| 廠商： | Comchip Technology Co., Ltd. |
| 英文描述： | Surface Mount Schottky Barrier Rectifier |
| 中文描述： | 表面貼裝肖特基整流器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 188K |
| 代理商： | CDBW160 |
CDBW120 THRU CDBW1100
Voltage Range 20 to 100V
Current 1.0 Ampere
High surge current capability
Mechanical Data
Surface Mount Schottky Barrier Rectifier
www.comchiptech.com
COMCHIP
MDS0407008A
Page 1
SOD-123
Dimensions in inches and (millimeters)
.154(3.90)
.141(3.60)
.016(0.40)Min.
.005(0.12)Max.
.098(2.50)
.110(2.80)
.
.
.
.
.
.
.
Terminals: Solderable per MIL-STD-750
method 2026
Features
Low forward voltage drop
High current capability
High reliability
Case: Molded plastic SOD-123
Epoxy: UL 94V-0 rate flame retardant
Weight: 0.01 gram
Polarity:Color band denotes cathode end
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
o
C
ambient temperature unless otherwise specified.
NOTES :
-55 to +125 / -55 to +150
CDBW
120
CDBW160
80
60
40
56
42
28
80
60
40
1.0
0.5
10
5.0
30
120
UNIT
V
V
V
V
A
A
mA
o
C
pF
20
14
20
SYBMOL
V
RRM
V
RMS
V
DC
I
(AV)
I
R
C
J
T
J
, T
STG
V
F
I
FSM
CDBW
1100
100
70
100
0.7
0.85
0.5
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
T
L
=100
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC Method)
Maximum Instantaneous Forward Voltage
@ 1.0 A
Maximum DC Reverse Current @T
J
=25
At Rated DC Blocking Voltage @T
J
=100
o
C
o
C
Typical junction Capacitance (Note 1)
Operating Junction and Storage Temperature
o
C
Range
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
CDBW
1
4
0
CDBW
1
8
0
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