欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: CDLL5533B
廠商: MICROSEMI CORP
元件分類: 參考電壓二極管
英文描述: Octal Buffer/Driver With 3-State Outputs 20-TVSOP -40 to 85
中文描述: 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
封裝: HERMETIC SEALED, GLASS, LL34, MELF-2
文件頁數: 1/2頁
文件大小: 113K
代理商: CDLL5533B
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
143
FIGURE 1
DESIGN DATA
CASE:
DO-213AA
,
Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (
ZOJX): 35
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C
DC Power Dissipation: 500 mW @ TEC= +125°C
Power Derating: 10 mW / °C above TEC= +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C
,
unless otherwise specified.
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CDI
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE CURRENT B-C-D SUFFIX
ZENER MAX. ZENER MAXIMUM REVERSE
TEST
IMPEDANCE
REGULATION
FACTOR
CURRENT
LOW
LEAKAGE CURRENT
CUVZ
VZ@ 1ZT
(NOTE 2)
1ZT
ZZT@ 1ZT
(NOTE 3)
lR
VR= VOLTS
1ZM
VZ
(NOTE 5)
1ZL
(NOTE 1)
(NOTE 4)
NON & A-
SUFFIX
B-C-D-
SUFFIX
VOLTS
mA
OHMS
μ
Adc
mA
VOLTS
mA
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF.
Units with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with
guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units,
“C” suffix for+2.0% and “D” suffix for +1.0%.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
Zener impedance is derived by superimposing on 1ZTA 60Hz rms a.c. current equal to
10% of1ZT.
Reverse leakage currents are measured at VRas shown on the table.
VZis the maximum difference between VZat lZTand VZat lZLmeasured
with the device junction in thermal equilibrium.
NOTE 4
NOTE 5
1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
ZENER DIODE, 500mW
LEADLESS PACKAGE FOR SURFACE MOUNT
LOW REVERSE LEAKAGE CHARACTERISTICS
METALLURGICALLY BONDED
1N5518BUR-1
thru
1N5546BUR-1
and
CDLL5518 thru CDLL5546D
MILLIMETERS INCHES
MIN
MAX
1.60
1.70
0.41
0.55
3.30
3.70
2.54 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
0.063 0.067
0.016 0.022
.130
.100 REF.
.001 MIN.
MAX
.146
相關PDF資料
PDF描述
CDLL5533C Octal Buffer/Driver With 3-State Outputs 20-TVSOP -40 to 85
CDLL5533D surface mount silicon Zener diodes
CDLL5534 Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85
CDLL5534A Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85
CDLL5534B Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85
相關代理商/技術參數
參數描述
CDLL5533C 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
CDLL5533D 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW
CDLL5533F 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW
CDLL5533G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW
CDLL5533G1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW
主站蜘蛛池模板: 永胜县| 龙游县| 宜城市| 浠水县| 大宁县| 新民市| 古交市| 巴林左旗| 西贡区| 陇川县| 崇义县| 依兰县| 夹江县| 巢湖市| 龙门县| 白沙| 墨竹工卡县| 民和| 延庆县| 即墨市| 通海县| 辽阳县| 白城市| 沈丘县| 仁化县| 兴宁市| 武隆县| 曲靖市| 邯郸市| 晋城| 乌兰县| 沧州市| 高台县| 博白县| 大渡口区| 枣庄市| 永寿县| 聊城市| 行唐县| 利津县| 久治县|