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參數資料
| 型號： | CEM4432 |
| 英文描述： | -30V P Channel MOS |
| 中文描述： | - 30V的P通道馬鞍山 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | CEM4432 |
30
N-Channel Enhancement Mode Field Effect Transistor
Dec. 2002
FEATURES
30V , 12.5A , R
DS(ON)
=9.5m
@V
GS
=10V.
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
12.5
50
2.3
2.5
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
50
/W
C
R
DS(ON)
=14m
CEM4410B
1
S
2
S
3
S
4
G
8
7
6
5
D
D
D
D
5
5-2
SO-8
1
a
a
a
a
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