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參數(shù)資料
| 型號： | CEP60N10 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | CEP60N10 |
N-Channel Enhancement Mode Field Effect Transistor
CEP60N10/CEB60N10
FEATURES
100V, 60A, R
DS(ON)
= 23.5m
@V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Symbol
V
DS
V
GS
I
D
I
DM
Limit
100
±
20
Units
V
V
P
D
1.3
148
200
240
60
W
A
A
W/ C
mJ
4 - 114
S
G
D
G
S
S
D
D
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
Lead free product is acquired.
2004.December
http://www.cetsemi.com
PRELIMINARY
Operating and Store Temperature Range
I
AS
T
J
,T
stg
-55 to 175
46
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θ
JC
R
θ
JA
Limit
0.75
Units
C/W
C/W
62.5
E
AS
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