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參數(shù)資料
型號: CFB0303
廠商: Electronic Theatre Controls, Inc.
英文描述: High Dynamic Range Low-Noise GaAs FET
中文描述: 高動態(tài)范圍低噪聲砷化鎵場效應(yīng)管
文件頁數(shù): 1/2頁
文件大小: 372K
代理商: CFB0303
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFB0303
Features
Low-Noise Figure from 0.8 to 2.0 GHz
High Gain
High Intercept Point
Highly Stable
Easily Matched to 50
70 mil Package
PHEMT Material
Applications
Cellular Base Stations
PCS Base Stations
Industrial Data Networks
Description
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 μm gate width and 0.25 μm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
High Dynamic Range
Low-Noise GaAs FET
Advanced Product Information
June 2002
(1 of 2)
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications
(TA = 25°C, 2 GHz)
Parameters
Vd= 4V, Id= 75 mA
Noise Figure 2
Associated Gain 2
Pout 1, 3
IP3 3
Id 3
Transconductance
Saturated Drain Current
Pinchoff Voltages
Conditions
Min
Typ
Max
Units
0.5
20.0
21.0
0.6
22.7
22.0
dB
dB
dBm
@ Noise Figure
P-1
+5 dBm POUT/Tone
@ P-1
Vds= 4 V, Vgs= 0 V
Vds= 4 V, Vgs= 0 V
Vds= 4 V, Ids= 1 mA
@ Tcase= 150°C liquid crystal test
19.0
20.0
32
34
dBm
83
mA
350
140
-0.3
mho
mA
V
80
240
Thermal Resistance
200
°C/W
Notes:1. @ Tcase= 25°C. Derate 5 mW/°C for Tcase>25°C.
2. Input matched for low noise.
3. Matched for power transfer.
Typical Scattering Parameters
(TA = 25°C, VDS= 4 V, IDS= 75 mA)
Frequency
(GHz)
Mag
Ang
0.5
0.98
-24
1.0
0.94
-44
2.0
0.85
-80
3.0
0.76
-112
4.0
0.70
-134
5.0
0.64
-154
S11
S21
S12
S22
Mag (dB)
8.47
8.20
7.30
6.30
5.60
5.13
Ang
160
147
118
94
74
54
MAG (dB)
0.02
0.03
0.05
0.07
0.08
0.09
ANG
77
69
51
37
29
19
MAG
0.33
0.32
0.27
0.25
0.24
0.23
ANG
-9
-15
-36
-50
-55
-61
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