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參數資料
| 型號： | CGH35030F |
| 廠商： | CREE INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| 中文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 669K |
| 代理商： | CGH35030F |
Subject to change without notice.
www.cree.com/wireless
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-
3.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
in a ceramic/metal flange package.
Package Type: 440166
PN: CGH35030F
PRELIMINARY
R
Features
3.3 - 3.9 GHz Operation
>11 dB Small Signal Gain
2.0 % EVM at 4 W P
OUT
23 % Efficiency at 4 W P
OUT
3.7C/W Typical thermal resistance under 4.0 W P
AVE
OFDM
WiMAX Fixed Access 802.16-2004 OFDM
Typical Performance Over 3.3-3.7GHz
(T
C
= 25C)
of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Units
Small Signal Gain
10.9
11.1
10.9
10.7
10.8
dB
EVM @ 36 dBm
1.9
1.9
1.9
2.0
2.0
%
Drain Efficiency @ 36 dBm
20.8
20.8
21.6
22.7
23.9
%
Input Return Loss
11.4
8.2
5.3
4.0
3.7
dB
Note:
Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
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