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參數資料
型號: CHA5390-99F
廠商: United Monolithic Semiconductors
英文描述: 24-30GHz Medium Power Amplifier
中文描述: 24 - 30GHz的中等功率放大器
文件頁數: 1/8頁
文件大小: 177K
代理商: CHA5390-99F
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
1/
8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5390 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military
to
commercial
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25μm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 24-30GHz
25dBm output power.
24dB gain
Good broadband matchings
Low DC power consumption, 460mA @ 5V
Chip size : 2.99 X 1.31 X 0.10 mm
Main Characteristics
Tamb. = 25°C
communication
Typical in JIG measurements :
-25
-20
-15
-10
-5
0
5
10
15
22
24
26
28
30
32
Frequency (GHz)
-10
-5
0
5
10
15
20
25
30
Input Rloss : grey solid line - Output Rloss : dash line.
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
24
30
GHz
G
Small signal gain
21
24
dB
P01
Output power at 1dB gain compression
24
25
dBm
Id
Bias current
460
720
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
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