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參數(shù)資料
| 型號： | CJD122NPN |
| 廠商： | Central Semiconductor Corp. |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| 中文描述： | 互補性的芯片功率達林頓晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 126K |
| 代理商： | CJD122NPN |
CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122,
CJD127 types are Complementary Silicon Power
Darlington Transistors manufactured in a surface
mount package designed for low speed switching
and amplifier applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
UNITS
V
V
V
A
A
mA
W
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
100
100
5.0
8.0
16
120
20
1.75
TJ,Tstg
Θ
JC
Θ
JA
-65 to +150
6.25
71.4
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
ICEO
VCE=50V
ICEV
VCE=100V, VBE(off)=1.5V
ICEV
ICBO
VCB=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
VCE(SAT)
IC=4.0A, IB=16mA
VCE(SAT)
IC=8.0A, IB=80mA
VBE(SAT)
IC=8.0A, IB=80mA
VBE(ON)
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=8.0A
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
Cob
VCB=10V, IE=0, f=1.0MHz (CJD122)
Cob
VCB=10V, IE=0, f=1.0MHz (CJD127)
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
(TC=25°C unless otherwise noted)
MIN
MAX
10
10
500
10
2.0
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
VCE=100V, VBE(off)=1.5V, TC=125oC
100
2.0
4.0
4.5
2.8
1000
100
4.0
12000
MHz
pF
pF
200
300
300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CJD127PNP | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| CJD122-NPN | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| CJD127 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| CK2C100LR | CHIP TYPE, WIDE TEMPERATURE RANGE |
| CK2A470LR | CHIP TYPE, WIDE TEMPERATURE RANGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CJD122-NPN | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| CJD127 | 制造商:Central Semiconductor Corp 功能描述:DARLINGTON PNP SM POWER TRANSISTOR DPAK 20W (TC=25C) 制造商:Central Semiconductor Corp 功能描述:DARLINGTON PNP SM POWER TRANSISTOR DPAK 20W (TC=25C) - free partial T/R at 500. |
| CJD127 TR13 | 功能描述:TRANS PNP 100V 8A DPAK 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:PNP - 達林頓 電流 - 集電極（Ic）（最大值）:8A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:4V @ 80mA，8A 電流 - 集電極截止（最大值）:10μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:1000 @ 4A，4V 功率 - 最大值:1.75W 頻率 - 躍遷:4MHz 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應商器件封裝:DPAK 標準包裝:1 |
| CJD127PNP | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
| CJD13003 | 制造商:Central Semiconductor Corp 功能描述:HIGH VOLTAGE NPN SM POWER TRANSISTOR DPAK 15W (TC=25C) 制造商:Central Semiconductor Corp 功能描述:HIGH VOLTAGE NPN SM POWER TRANSISTOR DPAK 15W (TC=25C) - free partial T/R at 500. |
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